The thesis gives a detailed description of GaN transistor. First part of thesis represents main characteristics of the semiconductor material GaN, and comparison between GaN transistor and Si MOSFET transistor.
The second part of thesis describes how to design and create electronic circuit of power switch with GaN transistor. The aim of thesis is to measure switching losses of GaN transistor, power efficiency and temperature distribution. With switching losses measurement, it has been shown that due to, inaccurate capture of current waveform and limited bandwidth of measurement equipment, it's not possible to present accurate results of measurement.