Močnostno stikalo z GaN tranzistorjem

HRIBAR, BOJAN (author), Zajec, Peter (mentor)

V diplomskem delu je podrobno opisan GaN tranzistor. Uvodoma so predstavljene glavne lastnosti polprevodniškega materiala GaN (galijev nitrid) in primerjava GaN tranzistorja s silicijevim MOSFET tranzistorjem. V nadaljevanju diplomske naloge je prikazano načrtovanje in postopek izdelave testnega vezja, na katerem sem izmeril karakteristike GaN tranzistorja. Testno vezje je bilo izdelano v obliki močnostnega stikala z GaN tranzistorjem. Cilj meritev je bilo merjenje preklopnih izgub GaN tranzistorja, izkoristka in temperaturne porazdelitve. Pri merjenju preklopnih izgub se je izkazalo, da zaradi neustreznega zajema poteka toka in omejene pasovne širine merilne opreme, ni mogoče podati natančnih rezultatov meritev.

• Language: Slovenian
• Keywords: GaN tranzistor, MOSFET tranzistor, GaN (galijev nitrid), močnostno stikalo z GaN tranzistorjem
• Work type: Undergraduate thesis
• Organization: FE - Faculty of Electrical Engineering
• Year: 2016
• PID: 20.500.12556/RUL-84944
• Publication date in RUL: 08.09.2016

Secondary language

• Language: English
• Title: Power switch with GaN transistor

Abstract

The thesis gives a detailed description of GaN transistor. First part of thesis represents main characteristics of the semiconductor material GaN, and comparison between GaN transistor and Si MOSFET transistor. The second part of thesis describes how to design and create electronic circuit of power switch with GaN transistor. The aim of thesis is to measure switching losses of GaN transistor, power efficiency and temperature distribution. With switching losses measurement, it has been shown that due to, inaccurate capture of current waveform and limited bandwidth of measurement equipment, it's not possible to present accurate results of measurement.

• Keywords: GaN transistor, MOSFET transistor, GaN (gallium nitride), power switch with GaN transistor