The present text describes our development of a new type of sensor element based on 2.5 dimensional electron gas. We wanted to find the reason for incorrect functioning of previously manufactured elements, then further, to design a new version of semiconductor heterostructure, and to define all the process steps needed for its manufacture. We have characterized the existing samples, and by means of computer simulations, we have determined the reasons for their previous incorrect functioning. Based on the present knowledge and literature from the field, we have suggested a new type of structure for which we have also defined the manufacturing process based on computer simulations. We have studied the impact of ion implantation, etching, geometry and ohmic contacts on functionality of the device. We have tested the functionality of the final structure and determined the optimal operational conditions at which the desired specifications are reached. The obtained results give us insight into functioning of the final device, and into the feasibility of its manufacturing process. This work is used as the basis for manufacturing of a new iteration of samples.