Senzorski FET element z 2,5-dimenzionalnim elektronskim plinom

KOBAL, JANKO (author), Lipovšek, Benjamin (mentor)

V pričujočem delu smo se ukvarjali z razvojem novega tipa senzorskega elementa, ki temelji na 2,5 dimenzionalnem elektronskem plinu. Želeli smo določiti vzrok za nepravilno delovanje že izdelanih elementov, zasnovati novo verzijo polprevodniške heterostrukture in zanjo definirati vse procesne korake. Obstoječe elemente smo karakterizirali in z uporabo računalniških simulacij ugotovili vzrok za nepravilno delovanje. Na podlagi že poznanih elementov in literature s tega področja smo predlagali nov tip strukture, za katerega smo s pomočjo simulacij definirali proces izdelave. Preučili smo vplive parametrov ionske implantacije, jedkanja, geometrije in ohmskih kontaktov na delovanje elementa. Preverili smo delovanje končne strukture in določili optimalne obratovalne pogoje, pri katerih so dosežene željene specifikacije elementa. Rezultati nam dajejo vpogled v delovanje končnega elementa in v zahtevnost procesa izdelave. Opravljeno delo služi kot osnova za izdelavo nove iteracije vzorcev.

• Language: Slovenian
• Keywords: tranzistor, FET, SISFET, GaAs, TCAD, Sentaurus, dopiranje, HEMT, 2DEG
• Work type: Master's thesis/paper
• Organization: FE - Faculty of Electrical Engineering
• Year: 2020
• PID: 20.500.12556/RUL-124037
• Publication date in RUL: 21.12.2020

Secondary language

• Language: English
• Title: Sensor FET element with a 2.5-dimensional electron gas

Abstract

The present text describes our development of a new type of sensor element based on 2.5 dimensional electron gas. We wanted to find the reason for incorrect functioning of previously manufactured elements, then further, to design a new version of semiconductor heterostructure, and to define all the process steps needed for its manufacture. We have characterized the existing samples, and by means of computer simulations, we have determined the reasons for their previous incorrect functioning. Based on the present knowledge and literature from the field, we have suggested a new type of structure for which we have also defined the manufacturing process based on computer simulations. We have studied the impact of ion implantation, etching, geometry and ohmic contacts on functionality of the device. We have tested the functionality of the final structure and determined the optimal operational conditions at which the desired specifications are reached. The obtained results give us insight into functioning of the final device, and into the feasibility of its manufacturing process. This work is used as the basis for manufacturing of a new iteration of samples.

• Keywords: transistor, FET, SISFET, GaAs, TCAD, Sentaurus, doping, HEMT, 2DEG