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Assessment of bulk and interface quality for liquid phase crystallized silicon on glass
ID Thi Trinh, Cham (Avtor), ID Bokalič, Matevž (Avtor), ID Preissler, Natalie (Avtor), ID Trahms, Martina (Avtor), ID Abou-Ras, Daniel (Avtor), ID Schlatmann, Rutger (Avtor), ID Amkreutz, Daniel (Avtor), ID Topič, Marko (Avtor)

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Izvleček
This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 µs for n-type LPC-Si with a doping concentration in the order of 10$^{16}$ cm$^{−3}$. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 µm and show a diffusion length of 0.4 µm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 10$^5$ cm/s are needed to get the best match between simulated and measured open circuit voltage (V$_{o c}$), indicating back surface passivation problem. The results showed that V$_{o c}$ losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation.

Jezik:Angleški jezik
Ključne besede:bulk lifetime, grain boundaries, GBs, heterojunction, light beam induced current, liquid phase crystallized silicon, LPC-Si, two-dimensional device simulation, silicon, glass, doping, passivation, current measurement, measurement by laser beam, photovoltaic cells
Vrsta gradiva:Članek v reviji
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:FE - Fakulteta za elektrotehniko
Status publikacije:Objavljeno
Različica publikacije:Recenzirani rokopis
Leto izida:2019
Št. strani:Str. 364-373
Številčenje:Vol. 9, no. 2
PID:20.500.12556/RUL-107086 Povezava se odpre v novem oknu
UDK:621.38
ISSN pri članku:2156-3381
DOI:10.1109/JPHOTOV.2018.2889183 Povezava se odpre v novem oknu
COBISS.SI-ID:12336212 Povezava se odpre v novem oknu
Datum objave v RUL:27.03.2019
Število ogledov:1183
Število prenosov:725
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Gradivo je del revije

Naslov:IEEE journal of photovoltaics
Skrajšan naslov:IEEE j. photovolt.
Založnik:Institute of Electrical and Electronics Engineers
ISSN:2156-3381
COBISS.SI-ID:8910164 Povezava se odpre v novem oknu

Sekundarni jezik

Jezik:Slovenski jezik
Ključne besede:življenjski časi, meje kristalnih zrn, heterospoj, LBIC, kristalizacija iz tekoče faze, LPC, dvodimenzionalne simulacije

Projekti

Financer:Drugi - Drug financer ali več financerjev
Program financ.:DAAD, PPP Slovenia
Številka projekta:2017-57365820

Financer:ARRS - Agencija za raziskovalno dejavnost Republike Slovenije
Številka projekta:BI-DE/17-19/004

Financer:ARRS - Agencija za raziskovalno dejavnost Republike Slovenije
Številka projekta:P2-0197
Naslov:Fotovoltaika in elektronika

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