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Assessment of bulk and interface quality for liquid phase crystallized silicon on glass
ID
Thi Trinh, Cham
(
Author
),
ID
Bokalič, Matevž
(
Author
),
ID
Preissler, Natalie
(
Author
),
ID
Trahms, Martina
(
Author
),
ID
Abou-Ras, Daniel
(
Author
),
ID
Schlatmann, Rutger
(
Author
),
ID
Amkreutz, Daniel
(
Author
),
ID
Topič, Marko
(
Author
)
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https://ieeexplore.ieee.org/document/8610302
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Abstract
This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 µs for n-type LPC-Si with a doping concentration in the order of 10$^{16}$ cm$^{−3}$. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 µm and show a diffusion length of 0.4 µm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 10$^5$ cm/s are needed to get the best match between simulated and measured open circuit voltage (V$_{o c}$), indicating back surface passivation problem. The results showed that V$_{o c}$ losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation.
Language:
English
Keywords:
bulk lifetime
,
grain boundaries
,
GBs
,
heterojunction
,
light beam induced current
,
liquid phase crystallized silicon
,
LPC-Si
,
two-dimensional device simulation
,
silicon
,
glass
,
doping
,
passivation
,
current measurement
,
measurement by laser beam
,
photovoltaic cells
Work type:
Article
Typology:
1.01 - Original Scientific Article
Organization:
FE - Faculty of Electrical Engineering
Publication status:
Published
Publication version:
Author Accepted Manuscript
Year:
2019
Number of pages:
Str. 364-373
Numbering:
Vol. 9, no. 2
PID:
20.500.12556/RUL-107086
UDC:
621.38
ISSN on article:
2156-3381
DOI:
10.1109/JPHOTOV.2018.2889183
COBISS.SI-ID:
12336212
Publication date in RUL:
27.03.2019
Views:
1540
Downloads:
905
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Record is a part of a journal
Title:
IEEE journal of photovoltaics
Shortened title:
IEEE j. photovolt.
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
2156-3381
COBISS.SI-ID:
8910164
Secondary language
Language:
Slovenian
Keywords:
življenjski časi
,
meje kristalnih zrn
,
heterospoj
,
LBIC
,
kristalizacija iz tekoče faze
,
LPC
,
dvodimenzionalne simulacije
Projects
Funder:
Other - Other funder or multiple funders
Funding programme:
DAAD, PPP Slovenia
Project number:
2017-57365820
Funder:
ARRS - Slovenian Research Agency
Project number:
BI-DE/17-19/004
Funder:
ARRS - Slovenian Research Agency
Project number:
P2-0197
Name:
Fotovoltaika in elektronika
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