In our contribution we present the use of MOSES (Monte-Carlo Single-
Electronics Simulator) as a method for simulation of complementary SET logic
circuits based on the orthodox theory. Simulation of single-electron devices including
a single-electron box, a single-electron transistor and a complementary
single-electron inverter was carried out. Their characteristics were evaluated at
different temperatures and the potential for room-temperature operation was assessed.
The characteristics were also compared to the measurements obtained at
other institutions and deviations between the two were examined. The potential
for voltage-state logic to replace conventional CMOS logic circuits was examined
and a proposal of a potential structure, operational at room-temperature, was
made.
|
