With the trend of miniaturizing logical circuits, there has arisen a need for logical circuits based on single-electron elements. In this thesis, we introduce the basic physics of single-electronics and analyze various numerical approaches for modeling single-electron devices.
The thesis explains different phenomena based on Orthodox theory. We focus on various modeling methods and simulations of single-electron devices, which represent a significant technology for the future of nanoelectronics due to their high sensitivity, low energy consumption, speed of operation, and small size. The main goal of the thesis was to analyze and compare different methods for modeling single-electron devices, including the Monte Carlo method, Master’s equations and the SPICE macro-model. The history of the development of single-electron devices is also described.
Simulation results showed that the Monte Carlo method and Master’s equations are highly accurate, but slower, while the SPICE method is faster but does not capture Coulomb blockade between adjacent transistors and has lower accuracy.
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