Graphene was the first synthesized two-dimensional material and has attracted a great deal of attention due to its application in electronic and photonic devices. This reflects from many theoretical and other studies of graphene due to its exceptional mechanical and physicochemical properties. However, the lack of positively charged semiconductor holes in pure graphene presents problems for its use in electronics. Consequently, a lot of attention is paid to altering graphene by doping – introducing atoms of other elements into pure graphene – and thus improving the semiconductor properties of graphene. In the present work we review the literature on the properties of graphene as semiconductor and describe the syntheses of modified forms of graphene. In this review we were interested in the use of semiconductors in diodes and transistors, advances in the development of diodes and transistors based on graphene and its hybrid systems with other materials. Graphene is still a promising semiconductor material, but still needs further research and development for its broader use in electronics.