We have been in search of new technologies that would allow for the development in computer science for quite some time. One of the main building blocks is the computer memory, which has seen a lot of progress in the recent years, mainly due to the new memory technologies.
A memory element which is the subject of this thesis is also one of them. The main part of the element is the material called TaS2, which undergoes a phase transition from the ground state to the so called charge density wave state or CDW. Electrical resistance rises for more then ten times when that happens and can be manipulated using an electrical pulse. To achieve a transition from high to low resistance one has to apply a short pulse of low voltage, we call that writing. In order to erase back to the state of high resistance, a longer pulse of small amplitude has to be used.
This thesis shows the theoretical background of the TaS2, the CDW transition and the write and erase phenomena. It's followed by the experiment, which consists of material synthesis, planning and fabrication of the memory element and the final product. It then presents the measurements and results, which demonstrate the attributes of our device. There is also an illustration of how a multi bit device would look like. At the end there are some final conclusions and a few comparisons amongst other memory devices.
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