In the last years we have witnessed a rise in the number of new memory devices and the emergence of storage class memory technology, which uses the best of both memory types used today. Combining the non-volatility of storage memories with the speed and low energy consumption of volatile memories, SCM is offering a new solution for scaling and power dissipation problems in larger data systems.
One of these emerging SCM technologies is the memristor, which uses electrically induced ion transport for controlled changes in resistivity, leading to binary digital state changes. In the first part I present experiments on a memristor device consisting of a layered structure of molybdenum oxides and the process involved in the fabrication of such a device. An in-situ electron microscope measurement system and IV curve measurement is described, as well as insight into memristor integrated circuit uses.
The second part presents groundwork experiments of a new CDW memory in TaS2, which offers unparalleled speed and low energy per bit at the expense of low temperature operation.
Fast electrical pulses trigger notable resistivity changes, leading to low resistance states from which relaxation to inital high resistance states can be achieved via long duration pulses or heating. Starting with a simplified theoretical explanation of the switching mechanism, the second part continues with sample preparation by TaS2 flaking, laser lithography and cooling. It moves on to dependence experiments, IV curves and optically triggered electrical switching.
The research part is followed by a short comparison of storage class memory technology and what it offers in the future.
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