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Interakcija nevtralnih vodikovih atomov s površino kositra
ID Kos Maligoj, Filip (Author), ID Traven, Gregor (Mentor) More about this mentor... This link opens in a new window, ID Zaplotnik, Rok (Comentor)

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Abstract
V magistrskem delu obravnavam interakcije nevtralnih reaktivnih atomov vodika s površino kositra v radiofrekvenčno (RF) sklopljeni vodikovi plazmi ter formacijo molekule stanana (SnH$_4$). V porazelektritvenem območju, kjer sem izmeril gostoto nevtralnih vodikovih atomov v območju $n\approx 10^{21} \ \rm m^{-3}$, sem z globinsko profilno masno spektroskopijo sekundarnih ionov (SIMS) določil hitrost jedkanja kositra z vodikovimi atomi, ki znaša $w=0,8 \ \rm \frac{nm}{s}\ (1\pm12\ \%)$. Na podlagi tega sem izračunal število atomov vodika, potrebnih za odstranitev enega kositrovega atoma, ki znaša $Y^{-1}=28800 \ (1\pm8\ \%)$. Poleg tega sem analiziral nastanek kositrovih kapljic na površini silicija, ki se pojavijo zaradi lokalnega segrevanja, zaradi sproščene disociacijske energije molekule vodika. Razumevanje teh interakcij je pomembno za razvoj tekočih kovinskih divertorjev v fuzijskih reaktorjih tipa tokamak ter za napredne plazemske tehnologije, kot je ekstremna ultravijolična (EUV) litografija.

Language:Slovenian
Keywords:radiofrekvenčna nizkotlačna vodikova plazma, kositer, jedkanje kositra, masna spektroskopija sekundarnih ionov, analiza površine, stanan
Work type:Master's thesis/paper
Typology:2.09 - Master's Thesis
Organization:FMF - Faculty of Mathematics and Physics
Year:2025
PID:20.500.12556/RUL-171608 This link opens in a new window
COBISS.SI-ID:247351299 This link opens in a new window
Publication date in RUL:29.08.2025
Views:607
Downloads:234
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Secondary language

Language:English
Title:Interaction of Neutral Hydrogen Atoms with a Tin Surface
Abstract:
This master’s thesis investigates the interactions between neutral reactive hydrogen atoms and a tin surface in a radio-frequency (RF)- coupled hydrogen plasma, focusing particularly on the formation of the stannane molecule (SnH$_4$). In the plasma's afterglow region, where the measured density of neutral hydrogen atoms is of the order of $n\approx 10^{21} \ \rm m^{-3}$, the etching rate of tin by hydrogen atoms was determined using secondary ion mass spectrometry (SIMS) depth profiling and found to be $w=0,8 \ \rm \frac{nm}{s}\ (1\pm12\ \%)$. From this, the number of hydrogen atoms required to remove a single tin atom was calculated as $Y^{-1}=28800 \ (1\pm8\ \%)$. Additionally, the formation of tin droplets on the silicon surface was analysed. These droplets result from localised heating caused by the deposition of dissociation energy from the hydrogen molecule. Understanding these interactions is relevant for the development of liquid metal divertors in tokamak fusion reactors and for advanced plasma-based technologies such as extreme ultraviolet (EUV) lithography.

Keywords:radio-frequency low pressure hydrogen plasma, tin, tin etching, secondary ion mass spectrometry, surface analysis, stannan

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