izpis_h1_title_alt

Izdelava in karakterizacija memristorjev MoOx in spominskih elementov TaS2
ID MIHAILOVIĆ, IAN ALEKSANDER (Author), ID Smole, Franc (Mentor) More about this mentor... This link opens in a new window

.pdfPDF - Presentation file, Download (4,97 MB)
MD5: 0B4EA0480136A3C6C2AE8E7F16DCCD01

Abstract
V zadnjih nekaj letih so se pojavile številne nove tehnologije pomnilnikov, ki jih uvrščamo pod hitri trajni spomin − HTS, ki združuje trajnost pomnilnikov za hranjenje podatkov ter hitrosti in nizko energijsko porabo kratkotrajnih, delovnih pomnilnikov. Eden od teh spominov je t. i. memristor, element, katerega obstoj so napovedali že v sedemdesetih letih, saj teoretično dopolnjuje manjkajočo zvezo med magnetnim pretokom in nabojem. Električno vzbujeni ionski transport v kovinskih oksidih memristorja povzroči spremembo upornosti strukture, kar lahko interpretiramo kot binarna digitalna stanja. V prvem delu diplomske naloge je predstavljen mehanizem delovanja tovrstnih memristorskih struktur in postopek izdelave plastne memristorske strukure iz molibdenovih oksidov. Opisan je merilni sistem znotraj elektronskega mikroskopa, merjenje karakteristik memristorjev ter perspektivna uporaba v integriranih vezjih in tridimenzionalnih strukturah. Drugi del predstavlja temeljne eksperimente nove vrste spomina, ki izrablja mehanizme valov gostote naboja v TaS2. Z zelo kratkimi električnimi sunki je v tem materialu, pri nizki temperaturi, mogoče spremeniti upornost za več tisoč ohmov, daljši sunki pa strukturo segrejejo in upornost vrnejo nazaj v prvotno stanje. Poglavje začne s poenostavljeno teoretično razlago mehanizma delovanja in predstavi pojav vala gostote naboja. Preide na izdelavo vzorcev z luščenjem rezin tantalovega disulfida in lasersko litografijo, nato pa opisuje postopke hlajenja in povezovanje z merilnimi inštrumenti preko bondiranja. Sledijo eksperimenti, ki prikazujejo preklopne lastnosti, odvisnosti parametrov in optični eksperimenti, ki dokazujejo perspektivnost tega CDW spomina. Raziskovalnemu delu sledi kratka primerjava modernih spominskih elementov in kaj ti obetajo za prihodnost.

Language:Slovenian
Keywords:spomin, hitri trajni spomin, memristor, molibden, MoOx, CDW, TaS2, val gostote naboja
Work type:Undergraduate thesis (m5)
Organization:FE - Faculty of Electrical Engineering
Year:2015
Publication date in RUL:27.05.2015
Views:1824
Downloads:378
Metadata:XML RDF-CHPDL DC-XML DC-RDF
:
Share:AddThis
AddThis uses cookies that require your consent. Edit consent...

Secondary language

Language:English
Title:Fabrication and characterization of MoOx memristors and TaS2 memory devices
Abstract:
In the last years we have witnessed a rise in the number of new memory devices and the emergence of storage class memory technology, which uses the best of both memory types used today. Combining the non-volatility of storage memories with the speed and low energy consumption of volatile memories, SCM is offering a new solution for scaling and power dissipation problems in larger data systems. One of these emerging SCM technologies is the memristor, which uses electrically induced ion transport for controlled changes in resistivity, leading to binary digital state changes. In the first part I present experiments on a memristor device consisting of a layered structure of molybdenum oxides and the process involved in the fabrication of such a device. An in-situ electron microscope measurement system and IV curve measurement is described, as well as insight into memristor integrated circuit uses. The second part presents groundwork experiments of a new CDW memory in TaS2, which offers unparalleled speed and low energy per bit at the expense of low temperature operation. Fast electrical pulses trigger notable resistivity changes, leading to low resistance states from which relaxation to inital high resistance states can be achieved via long duration pulses or heating. Starting with a simplified theoretical explanation of the switching mechanism, the second part continues with sample preparation by TaS2 flaking, laser lithography and cooling. It moves on to dependence experiments, IV curves and optically triggered electrical switching. The research part is followed by a short comparison of storage class memory technology and what it offers in the future.

Keywords:memory, storage class memory, memristor, molybdenum, MoOx, CDW, TaS2, charge density wave

Similar documents

Similar works from RUL:
Similar works from other Slovenian collections:

Back