Multimodal characterization of pristine and device-Integrated 2D materials under continuous and pulsed X-rays

Ramirez Soto, Naharai Osmel (author), Uršič, Mitja (mentor), Konolovalov, Oleg (comentor), Rein, Valentina (comentor)

2D Materials (2DMs) such as Graphene (Gr) and Hexagonal Boron Nitride (HBN) exhibit unique electronic and structural properties making them highly attractive for applications in nanoelectronics and radiation-tolerant devices. Understanding their response to ionizing radiation is crucial for their integration in future high-radiation environments. Primarily, this master’s thesis was conducted within the ID10 research group at the European Synchrotron Radiation Facility (ESRF) and focuses on the effects of continuous X-ray (XR) irradiation on 2DM layers. Grazing Incidence Diffraction (GID) and X-Ray Reflectivity (XRR) measurements were performed to characterize the structural response of few-layer Gr and HBN deposited on Silicon (Si) and Silicon Oxide (SiO2) substrates. Additionally, within the ID09 research group pulsed XR irradiation experiments were conducted on Graphene Field Effect Transistors (GFETs), followed by electrical characterization to assess changes in device performance parameters such as charge neutrality point, hysteresis, and current response. The results of GID, XRR and electrical characterization reveal measurable effect of structural modifications induced by irradiation, as well as shifts in the electrical characteristics of GFETs, depending on irradiation conditions. These findings contribute to a better understanding of radiation-induced effects in 2D systems and inform the design of more robust devices for future applications in sensing, electronics, and radiation environments.

• Language: English
• Keywords: graphene, HBN, GFET, XR irradiation, XRR, GID, electrical characterization, 2DMs
• Work type: Master's thesis/paper
• Typology: 2.09 - Master's Thesis
• Organization: FMF - Faculty of Mathematics and Physics
• Year: 2025
• PID: 20.500.12556/RUL-173507
• COBISS.SI-ID: 250637315
• Publication date in RUL: 18.09.2025

Secondary language

• Language: Slovenian
• Title: Multimodalna karakterizacija čistih in v naprave vgrajenih 2D materialov pod delovanjem kontinuirnega in pulznega rentgenskega sevanja

Abstract

2D materiali (2DM), kot sta grafen (Gr) in heksagonalni borov nitrid (HBN), imajo lastnosti, zaradi katerih so zanimivi za uporabo v nanoelektroniki in v za sevanje tolerantnih naprav. Razumevanje njihovega odziva na ionizirajoče sevanje je tako ključno za njihovo prihodnjo vključitev v visoko sevalna okolja. V magistrskem delu se osredotočamo na učinke neprekinjenega obsevanja z rentgenskim sevanjem (XR) na plasti 2DM. Izvedene so bile meritve difrakcije pri plitkem vpadnem kotu (GID) in odbojnosti rentgenskega sevanja (XRR). Cilj je bila karakterizacija strukturnega odziva večplastnega Gr in HBN, nanesenega na silicij (Si) in silicijev dioksid (SiO2). Dodatno je bilo izvedeno tudi pulzno rentgensko obsevanje tranzistorjev (GFET, angl. Graphene Field Effect Transistors), čemur je sledila podrobna električna karakterizacija z namenom ocene sprememb v delovanju naprav, kot so točka nevtralnosti naboja, histereza in tokovni odziv. Rezultati GID, XRR in električne karakterizacije kažejo na vpliv sevanja na strukturo 2D materialov, ter na vpliv na električne lastnosti GFET jev. Rezultati magistrskega dela prispevajo k razumevanju vpliva sevanja na 2D materiale in pripomorejo k načrtovanju robustnejših naprav za uporabo v senzoriki, elektroniki in v sevalnih okoljih.

• Keywords: grafen, HBN, GFET, rentgensko sevanje, XRR, GID, električna karakterizacija, 2D materiali