Izdelava naprednih 1T-TaS$_2$ elektronskih naprav

Rupnik, Matevž (author), Mihailović, Dragan (mentor), Venturini, Rok (comentor)

V tej magistrski nalogi so raziskani vplivi substrata in litografskih postopkov na vzorce 1T-TaS$_2$, ki je znan po svojem bogatem faznem diagramu z več fazami vala gostote naboja in skritim metastabilnim stanjem. Preučili smo, kako različne metode izdelave vplivajo na lastnosti vzorcev, z namenom zmanjšanja neželenih učinkov, povezanih z izdelavo. Poleg tega smo predstavili alternativne metode priprave vzorcev 1T-TaS$_2$, ki omogočajo, da so transportne lastnosti materiala izražene brez dodatnih modifikacij zaradi načina izdelave. Z izboljšanimi tehnikami izdelave smo analizirali obnašanje materiala 1T-TaS$_2$ ob zmanjšanju debeline vzorca in ugotovili, ali so rezultati skladni s prejšnjimi opažanji. Poleg tega smo preučevali, kako isti dejavniki vplivajo na skrito metastabilno stanje. Bolj stabilno metastabilno stanje ima pomembne praktične implikacije, saj bi tako 1T-TaS$_2$ lahko bil bližje praktični uporabi, na primer kot memristor.

• Language: Slovenian
• Keywords: 1T-TaS$_2$, val gostote naboja, metastabilno stanje, litografija, prosto stoječi vzorci, memristor
• Work type: Master's thesis/paper
• Typology: 2.09 - Master's Thesis
• Organization: FMF - Faculty of Mathematics and Physics
• Year: 2024
• PID: 20.500.12556/RUL-161812
• COBISS.SI-ID: 207496451
• Publication date in RUL: 14.09.2024

RUPNIK, Matevž, 2024, Izdelava naprednih  1T-TaS$_2$ elektronskih naprav [online]. Master’s thesis. [Accessed 23 March 2025]. Retrieved from: https://repozitorij.uni-lj.si/IzpisGradiva.php?lang=eng&id=161812

Secondary language

• Language: English
• Title: Fabrication of advanced 1T-TaS$_2$ electronic devices

Abstract

This master's thesis explores the effects of substrates and lithographic processes on 1T-TaS$_2$ samples, known for their complex phase diagram with multiple charge density wave phases and a hidden metastable state. We investigated how different fabrication methods influence sample properties, aiming to reduce unwanted effects arising from the fabrication process. Furthermore, we introduced alternative preparation methods for 1T-TaS$_2$ samples, ensuring that the material's transport properties are showcased without additional modifications due to the fabrication technique. With these improved methods, we analyzed how 1T-TaS$_2$ behaves when reducing sample thickness and whether the outcomes align with previous findings. Additionally, we examined how same factor aslo impact the hidden metastable state. A more stable metastable state could have substantial practical implications, potentially bringing 1T-TaS$_2$ closer to practical uses, such as in memristors.

• Keywords: 1T-TaS$_2$, charge density wave, metastable state, lithography, free-standing samples, memristor