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MODELIRANJE NAPREDNIH KRMILNIKOV ELEKTROMOTORJEV ZA ELEKTRIČNE AVTOMOBILSKE POGONE
ID SKUBER, TADEJ (Author), ID Trontelj, Janez (Mentor) More about this mentor... This link opens in a new window

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Abstract
Disertacija je razdeljena na dva dela. Prvi del je osredotočen na izvedbo in verifikacijo tokovnega krmiljenja MOSFET-ov (angl. Metal Oxide Semiconductor Field Effect Transistor). Izhodišče predstavlja delujoč in preizkušen sistem, ki ga je tekom svojega doktorskega dela razvil Rok Vrtovec. Vezje je iz gonilnika spodnje strani (angl. low side driver) nadgrajeno na enofazni gonilnik (oz. polmostično vezje ali angl. half-bridge), ki je galvansko ločen od krmilnega vezja. Za krmiljenje ene faze trifaznega razsmernika (angl. three phase inverter) sta tako kombinirana dva gonilnika spodnje strani. Implementacija novega gonilnika je preizkušena z meritvijo izdelanega testnega trifaznega sistema za krmiljenje motorjev. Testirana je gonilnikova spodobnost krmiljenja več paralelnih tranzistorjev in pregledan njihov vpliv na obliko toka v posamična vrata MOSFET-a. Gonilnik je nazadnje uporabljen za krmiljenje MOSFET-a pri poganjanju obremenjenega motorja. Drugi del disertacije je osredotočen na modeliranje močnostne stopnje. Za testiranje obremenjenih močnostnih modulov je s pomočjo simulacij narejen električni in termični matematični model močnostne stopnje. Uporabljeni pasivni in aktivni električni elementi vezja so modelirani v SPICE jeziku. V obliki prilagojenega SPICE modela je dodan tudi električni model geometrije vezja z različnimi uporabljenimi materiali, ki je originalno modeliran z uporabo programske opreme Ansys Q3D Extractor. Pod testnimi obremenitvami so simulirane termične lastnosti vezja. Uporabljeni so realni parametri termičnih prevodnosti uporabljenih materialov in kar se da natančna postavitev izvorov toplote v vezju. Pri termičnih simulacijah je uporabljen simulator Ansys Icepak. Za morebitne nepravilnosti električnih simulacij je model najprej preizkušen v polmostični konfiguraciji s pulznimi testi (angl. double pulse test). Po odpravi težav in dopolnitvi modela pa je preizkušen še v celotni trifazni simulaciji. Električnemu modelu tranzistorjev je dodan tudi pasivni model termične upornosti modula do hladilnika. Model uporabljenega bremena je poenostavljen na nivo treh tuljav (serijska vezava upornosti in induktivnosti), vezanih v konfiguracijo zvezda. Za preverjanje pravilnosti simulacij so močnostni moduli tudi električno in termično preizkušeni. Kakor v električnih simulacijah so najprej opravljeni preizkusi s pulznimi testi, kasneje pa so moduli testirani tudi v trifazni konfiguraciji. Za razliko od simulacij so moduli med preizkusi uporabljeni pri pogonu dejanskega motorja. Narejene so tudi termične meritve, ki pa so opravljene v linearnem režimu delovanja tranzistorjev. Modul je s termalno pasto termično sklopljen na aktivno hlajeno hladilno telo. Tranzistorji so obremenjeni pod skupno močjo 20 W, 50 W in 100 W. Izmerjene so temperature na modulu in hladilniku. Električno so pomerjeni moduli, narejeni iz substrata Al2O3 (glinica oz. angl. alumina; aluminijev oksid oz. angl. aluminium oxide), termično pa iz Al2O3 in AlN (aluminijev nitrid oz. angl. aluminium nitride).

Language:Slovenian
Keywords:močnostni moduli, simulacije vezij, oblikovanje toka vrat, MOSFET.
Work type:Doctoral dissertation
Organization:FE - Faculty of Electrical Engineering
Year:2022
PID:20.500.12556/RUL-139587 This link opens in a new window
Publication date in RUL:05.09.2022
Views:277
Downloads:75
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Secondary language

Language:English
Title:MODELING OF ADVANCED ELECTRIC MOTOR CONTROLLERS FOR ELECTRIC CAR DRIVES
Abstract:
The dissertation is divided into two parts. The first part of the thesis focuses on the implementation and verification of a current driver for a MOSFET. The starting point is a working and tested system, developed by Rok Vrtovec during his PhD thesis. The circuit is upgraded from a low side driver to a single-phase (half-bridge) driver, which is galvanically isolated from the control circuit. In this way, two low side drivers are combined to control one phase of a three-phase inverter. The implementation of the new driver is tested by measuring a three-phase motor control test system. The ability of the driver to control multiple parallelized transistors is tested and its effect on the shape of the current to each gate of the MOSFET is investigated. The driver is eventually used to control a MOSFET driving a loaded motor. The second part of the paper deals with the modelling of the power stage. To test the behaviour of the power modules under load, an electrical and thermal mathematical model of the power stage is developed using simulations. The passive and active electrical circuit elements used are modelled in the SPICE language. An electrical model of the circuit geometry with the different materials used, originally modelled using Ansys Q3D Extractor software, is also added in the form of a customised SPICE model. The thermal properties of the circuit are simulated under test loads. Realistic thermal conductivity parameters of the used materials and the most accurate possible layout of the heat sources in the circuit are used. The Ansys Icepak simulator is used for thermal simulations. To check for any anomalies in the electrical simulations, the model was first tested in a half-bridge configuration with pulse tests. After the problems were solved and the model is updated, it was tested in a full three-phase simulation. A passive model of the thermal resistance of the module to the heat sink is added to the electrical model of the transistors. The used load model is simplified to three inductors (series connection of resistor and inductor) connected in a star configuration. The power modules are also tested electrically and thermally to verify the correctness of the simulations. As with the electrical simulations, the modules are first tested with pulse tests and later in a three-phase configuration. Unlike the simulations, the modules are used to drive the actual motor during testing. Thermal measurements are also performed but in the linear mode of operation of the transistors. The module is thermally coupled to an actively cooled heat sink with thermal paste. The transistors are loaded with a total power of 20 W, 50 W and 100 W. The temperatures on the module and the heat sink are measured. Electrical measurements are performed with the modules made of Al2O3 (alumina; aluminium oxide), while thermal measurements of both Al2O3 and AlN (aluminium nitride) are performed.

Keywords:power modules, circuit simulation, gate current shaping, MOSFET

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