In this master thesis a development of three-phase inverter with SiC technology is presented. Instead of classic silicon MOSFET transistors, silicon carbide transistors are implemented, that are becoming very popular on the market because of their advantages. Due to their specific gate control, different manufacturers design dedicated gate drivers. Selected single gate driver offers advanced protection, configuration and diagnostic features which can be monitored via SPI interface.
In first part of thesis a SiC technology with emphasis on SiC MOSFETs and their performance is presented. Further on, there is detailed description of selected gate driver with advanced protection and communication interface.
Second part is based on designing and implementing of STGAP1AS drivers in three-phase inverter with SiC MOSFETs. All designed printed circuit boards and development of software driver are presented and described.