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Napredno krmiljenje pretvornika s SiC MOSFET tranzistorji
PUŠNIK, BOŠTJAN (Author), Vončina, Danjel (Mentor) More about this mentor... This link opens in a new window

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Abstract
V magistrskem delu je predstavljen razvoj trifaznega razsmernika, ki temelji na SiC tehnologiji. Namesto klasičnih silicijevih MOSFET tranzistorjev so uporabljeni tranzistorji iz silicijevega karbida, ki se zaradi svojih prednostih, v zadnjih letih vedno bolj uveljavljajo na tržišču. Ker SiC MOSFET-i zaradi svoje specifike zahtevajo drugačno krmiljenje, različni proizvajalci izdelujejo namenska prožilna vezja. Izbrano prožilno vezje lahko krmili en tranzistor in omogoča številne konfiguracije in naprednejšo diagnostiko, z mikrokrmilnikom pa komunicira preko SPI vmesnika. V prvem delu je predstavljena SiC tehnologija s poudarkom na SiC MOSFET ih in njihovih lastnostih. Podrobneje je opisano tudi uporabljeno prožilno vezje z vsemi zaščitami, ki jih ponuja. Drugi del naloge temelji na načrtovanju in implementaciji prožilnih vezij STGAP1AS v trifaznem razsmerniku s SiC MOSFET-i. Predstavljena so vsa načrtovana tiskana vezja v razsmerniku in programska koda gonilnika, ki skrbi za komunikacijo med prožilnimi vezji in mikrokrmilnikom.

Language:Slovenian
Keywords:SiC MOSFET, prožilno vezje, SPI, trifazni razsmernik
Work type:Master's thesis/paper (mb22)
Organization:FE - Faculty of Electrical Engineering
Year:2019
Views:483
Downloads:167
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Secondary language

Language:English
Title:Advanced control of SiC MOSFET converter
Abstract:
In this master thesis a development of three-phase inverter with SiC technology is presented. Instead of classic silicon MOSFET transistors, silicon carbide transistors are implemented, that are becoming very popular on the market because of their advantages. Due to their specific gate control, different manufacturers design dedicated gate drivers. Selected single gate driver offers advanced protection, configuration and diagnostic features which can be monitored via SPI interface. In first part of thesis a SiC technology with emphasis on SiC MOSFETs and their performance is presented. Further on, there is detailed description of selected gate driver with advanced protection and communication interface. Second part is based on designing and implementing of STGAP1AS drivers in three-phase inverter with SiC MOSFETs. All designed printed circuit boards and development of software driver are presented and described.

Keywords:SiC MOSFET, gate driver, SPI, three phase inverter

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