Preučevanje detektorja HVCMOS2 za meritve sledi nabitih delcev z metodo E-TCT

Ščetinec, Manja (author), Mandić, Igor (mentor), Kramberger, Gregor (comentor)

Magistrsko delo zajema opis delovanja silicijevih detektorjev ter nastanek signala v njih. Preučevali smo prototip blaziničastega detektorja HVCMOS2 izdelanega s tehnologijo HV-CMOS. Ta omogoča uporabo visoke napetosti v detektorjih CMOS, ki poveča osiromašeno področje. Osiromašeno področje omogoča velik signal in hitro zbiranje naboja v okoljih z visokimi dozami sevanja, kot jih najdemo na hadronskih trkalnikih. Predstavljen je nov način merjenja zbranega naboja z metodo E-TCT. Pri tem osvetlimo rob detektorja s kratkim sunkom infrardeče svetlobe zbrane v ozek žarek in opazujemo odziv detektorja z metodo tranzientnih tokov. Opisane so meritve signala z metodo E-TCT ter meritve signala elektronov iz izvora stroncija (90)Sr. Prikazana je tudi postavitev merilnega sistema in določitev potrebnih parametrov za uspešno delovanje, kot je metoda izostritve laserskega žarka pod preiskovano blazinico. Namen meritev z metodo E-TCT je določitev zbranega naboja pri različnih zapornih napetostih ter primerjava prispevka potovanja nosilcev naboja v električnem polju s prispevkom potovanja nosilcev naboja z difuzijo. Preverili smo tudi odziv detektorja na elektrone iz izvora stroncija (90)Sr ter analizirali rezultate.

• Language: Slovenian
• Keywords: silicijevi točkovni detektorji, monolitni senzorji CMOS (CMOS MAPS), detektorji HV-CMOS, metoda tranzientnih tokov z osvetlitvijo roba (E-TCT), profil zbranega naboja, osiromašeno področje, potovanje nosilcev naboja, difuzija, stroncij (90)Sr
• Work type: Master's thesis/paper
• Typology: 2.09 - Master's Thesis
• Organization: FMF - Faculty of Mathematics and Physics
• Year: 2018
• PID: 20.500.12556/RUL-100620
• COBISS.SI-ID: 3192676
• Publication date in RUL: 03.04.2018

ŠČETINEC, Manja, 2018, Preučevanje detektorja HVCMOS2 za meritve sledi nabitih delcev z metodo E-TCT [online]. Master’s thesis. [Accessed 12 June 2025]. Retrieved from: https://repozitorij.uni-lj.si/IzpisGradiva.php?lang=eng&id=100620

Secondary language

• Language: English
• Title: Research of HVCMOS2 detector for measurements of charged particles' traces by using E-TCT

Abstract

The master thesis covers basic concepts of signal formation in silicon particle detectors. We focused on the HVCMOS2 pixel detector prototype manufactured in HV-CMOS technology. The HV-CMOS process allows application of high bias voltage (substrate voltage) to CMOS detectors, which increases the depletion depth in the substrate. Drift of carriers in electric field provides fast and large signal, required in areas with high radiation doses (e.g. in hadron colliders). The prototype has been tested in a new way with a method known as the edge transient current technique (E-TCT), where detector is illuminated from the edge by a focused narrow beam of infrared light. Then the current induced by the motion of the free carriers (transient current) is measured with a fast wideband current amplifier. In addition to the Edge-TCT the signals for electrons from strontium (90)Sr, were also measured. The description of the experimental setup is given in the work together with all the required parameters for operation, such as the method for focusing the light underneath the investigated cell. Using the E-TCT method, we recorded the profiles of the collected charge at various substrate voltages. We further compared the collected charge due to carriers’ drift to the collected charge due to diffusion. We also checked the response of the detector to the electrons from the strontium source (90)Sr and analyzed the results.

• Keywords: silicon pixel detectors, monolithic sensors (CMOS MAPS), HV-CMOS detectors, edge transient current technique (E-TCT), charge collection profile, depleted area, drift of charge carriers, diffusion, strontium (90)Sr