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Preučevanje detektorja HVCMOS2 za meritve sledi nabitih delcev z metodo E-TCT
ID Ščetinec, Manja (Author), ID Mandić, Igor (Mentor) More about this mentor... This link opens in a new window, ID Kramberger, Gregor (Comentor)

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Abstract
Magistrsko delo zajema opis delovanja silicijevih detektorjev ter nastanek signala v njih. Preučevali smo prototip blaziničastega detektorja HVCMOS2 izdelanega s tehnologijo HV-CMOS. Ta omogoča uporabo visoke napetosti v detektorjih CMOS, ki poveča osiromašeno področje. Osiromašeno področje omogoča velik signal in hitro zbiranje naboja v okoljih z visokimi dozami sevanja, kot jih najdemo na hadronskih trkalnikih. Predstavljen je nov način merjenja zbranega naboja z metodo E-TCT. Pri tem osvetlimo rob detektorja s kratkim sunkom infrardeče svetlobe zbrane v ozek žarek in opazujemo odziv detektorja z metodo tranzientnih tokov. Opisane so meritve signala z metodo E-TCT ter meritve signala elektronov iz izvora stroncija (90)Sr. Prikazana je tudi postavitev merilnega sistema in določitev potrebnih parametrov za uspešno delovanje, kot je metoda izostritve laserskega žarka pod preiskovano blazinico. Namen meritev z metodo E-TCT je določitev zbranega naboja pri različnih zapornih napetostih ter primerjava prispevka potovanja nosilcev naboja v električnem polju s prispevkom potovanja nosilcev naboja z difuzijo. Preverili smo tudi odziv detektorja na elektrone iz izvora stroncija (90)Sr ter analizirali rezultate.

Language:Slovenian
Keywords:silicijevi točkovni detektorji, monolitni senzorji CMOS (CMOS MAPS), detektorji HV-CMOS, metoda tranzientnih tokov z osvetlitvijo roba (E-TCT), profil zbranega naboja, osiromašeno področje, potovanje nosilcev naboja, difuzija, stroncij (90)Sr
Work type:Master's thesis/paper
Typology:2.09 - Master's Thesis
Organization:FMF - Faculty of Mathematics and Physics
Year:2018
PID:20.500.12556/RUL-100620 This link opens in a new window
COBISS.SI-ID:3192676 This link opens in a new window
Publication date in RUL:03.04.2018
Views:1499
Downloads:432
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Secondary language

Language:English
Title:Research of HVCMOS2 detector for measurements of charged particles' traces by using E-TCT
Abstract:
The master thesis covers basic concepts of signal formation in silicon particle detectors. We focused on the HVCMOS2 pixel detector prototype manufactured in HV-CMOS technology. The HV-CMOS process allows application of high bias voltage (substrate voltage) to CMOS detectors, which increases the depletion depth in the substrate. Drift of carriers in electric field provides fast and large signal, required in areas with high radiation doses (e.g. in hadron colliders). The prototype has been tested in a new way with a method known as the edge transient current technique (E-TCT), where detector is illuminated from the edge by a focused narrow beam of infrared light. Then the current induced by the motion of the free carriers (transient current) is measured with a fast wideband current amplifier. In addition to the Edge-TCT the signals for electrons from strontium (90)Sr, were also measured. The description of the experimental setup is given in the work together with all the required parameters for operation, such as the method for focusing the light underneath the investigated cell. Using the E-TCT method, we recorded the profiles of the collected charge at various substrate voltages. We further compared the collected charge due to carriers’ drift to the collected charge due to diffusion. We also checked the response of the detector to the electrons from the strontium source (90)Sr and analyzed the results.

Keywords:silicon pixel detectors, monolithic sensors (CMOS MAPS), HV-CMOS detectors, edge transient current technique (E-TCT), charge collection profile, depleted area, drift of charge carriers, diffusion, strontium (90)Sr

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