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Izdelava naprednih 1T-TaS$_2$ elektronskih naprav
ID Rupnik, Matevž (Author), ID Mihailović, Dragan (Mentor) More about this mentor... This link opens in a new window, ID Venturini, Rok (Comentor)

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Abstract
V tej magistrski nalogi so raziskani vplivi substrata in litografskih postopkov na vzorce 1T-TaS$_2$, ki je znan po svojem bogatem faznem diagramu z več fazami vala gostote naboja in skritim metastabilnim stanjem. Preučili smo, kako različne metode izdelave vplivajo na lastnosti vzorcev, z namenom zmanjšanja neželenih učinkov, povezanih z izdelavo. Poleg tega smo predstavili alternativne metode priprave vzorcev 1T-TaS$_2$, ki omogočajo, da so transportne lastnosti materiala izražene brez dodatnih modifikacij zaradi načina izdelave. Z izboljšanimi tehnikami izdelave smo analizirali obnašanje materiala 1T-TaS$_2$ ob zmanjšanju debeline vzorca in ugotovili, ali so rezultati skladni s prejšnjimi opažanji. Poleg tega smo preučevali, kako isti dejavniki vplivajo na skrito metastabilno stanje. Bolj stabilno metastabilno stanje ima pomembne praktične implikacije, saj bi tako 1T-TaS$_2$ lahko bil bližje praktični uporabi, na primer kot memristor.

Language:Slovenian
Keywords:1T-TaS$_2$, val gostote naboja, metastabilno stanje, litografija, prosto stoječi vzorci, memristor
Work type:Master's thesis/paper
Typology:2.09 - Master's Thesis
Organization:FMF - Faculty of Mathematics and Physics
Year:2024
PID:20.500.12556/RUL-161812 This link opens in a new window
COBISS.SI-ID:207496451 This link opens in a new window
Publication date in RUL:14.09.2024
Views:154
Downloads:38
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Secondary language

Language:English
Title:Fabrication of advanced 1T-TaS$_2$ electronic devices
Abstract:
This master's thesis explores the effects of substrates and lithographic processes on 1T-TaS$_2$ samples, known for their complex phase diagram with multiple charge density wave phases and a hidden metastable state. We investigated how different fabrication methods influence sample properties, aiming to reduce unwanted effects arising from the fabrication process. Furthermore, we introduced alternative preparation methods for 1T-TaS$_2$ samples, ensuring that the material's transport properties are showcased without additional modifications due to the fabrication technique. With these improved methods, we analyzed how 1T-TaS$_2$ behaves when reducing sample thickness and whether the outcomes align with previous findings. Additionally, we examined how same factor aslo impact the hidden metastable state. A more stable metastable state could have substantial practical implications, potentially bringing 1T-TaS$_2$ closer to practical uses, such as in memristors.

Keywords:1T-TaS$_2$, charge density wave, metastable state, lithography, free-standing samples, memristor

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