Nastanek vidne svetlobe v siliciju

Rogelj, Jure (author), Krč, Janez (mentor), Debevc, Andraž (comentor)

V diplomskem delu obravnavamo pojav nastanka vidne (bele) svetlobe iz silicija, do katerega lahko pride pri zaporni polarizaciji silicijevega pn-spoja. Kljub temu, da silicij spada med indirektne polprevodnike in da njegova energijska reža narekuje energijo fotonov v infrardečem spektru, je nastala svetloba vidna. Pojav se kaže kot zanimiv za morebitno uporabo v nekaterih fotonskih aplikacijah. V delu najprej podamo teoretično razlago nastanka svetlobe. Opisana sta osnovna mehanizma odgovorna za pojav te svetlobe in vpliv teh mehanizmov na spekter oddane svetlobe. Nato predstavimo naš eksperiment in podamo rezultate meritev. V eksperimentu smo uporabili zaporno polariziran bazno-emitorski spoj bipolarnega tranzistorja.

• Language: Slovenian
• Keywords: Ključne besede: silicij, diodni spoj, zaporna polarizacija, spekter, unipolarni tranzistor, bipolarni tranzistor, bela svetloba, rekombinacija visokoenergijskih nosilcev naboja, sevanje zavirajočih naelektrenih delcev, plazovna ionizacija, fotonska integrirana vezja
• Work type: Bachelor thesis/paper
• Typology: 2.11 - Undergraduate Thesis
• Organization: FE - Faculty of Electrical Engineering
• Year: 2024
• PID: 20.500.12556/RUL-159693
• COBISS.SI-ID: 202171907
• Publication date in RUL: 18.07.2024

Secondary language

• Language: English
• Title: The formation of visible light in silicon

Abstract

In this thesis we are discussing the occurrence of visible (white) light from silicon, which occurs in reverse polarized silicon pn junction. Despite the fact, that silicon is indirect semiconductor and its band gap dictates its photon energy in infrared spectrum, the resulting light is in visible spectrum. This phenomenon is interesting for potential usage in certain photonic applications. The basic mechanisms responsible for emission of aforementioned light and impact of these mechanisms on spectrum of this light are described. Then we present our experiment and describe the results. In this experiment we used reverse polarized base-emitter junction of bipolar transistor.

• Keywords: Keywords: silicon, diode junction, reverse polarization, spectrum, unipolar tranzistor, bipolar tranzistor, white light, plasmotic ionization, recombination of high-energy charge cariers, Bremsstrahlung radiation, photonic integrated circuits