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Primerjava vezave magnetnih atomov na kovinski in izolativni plasti
ID Bobnar, Tadeja (Author), ID Škarabot, Miha (Mentor) More about this mentor... This link opens in a new window, ID Midden, Marion van (Comentor)

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Abstract
V nalogi je predstavljena študija vezave atomov mangana na površini bakra s kristalografsko orientacijo (111) delno prekriti z izolativno plastjo CuN. V vakuumskem sistemu ultravisokovakuumskega nizkotemperaturnega vrstičnega tunelskega mikroskopa smo pripravili atomsko čisto in urejeno površino Cu(111). Na tej površini smo nato s postopkom implantacije dušika in žarjenjem pripravili tanko izolativno monoplast CuN. Tako pripravljena površina je bila le delno prekrita s CuN, kar nam je omogočilo sočasno (znotraj enega eksperimentalnega cikla) opazovati in primerjati lastnosti obeh tipov površine. Z vrstičnim tunelskim mikroskopom smo posneli slike površine in karakterizirali valovito strukturo CuN plasti ter tri orientacije rasti. S pomočjo slik, posnetih pri različnih napetostih z atomsko ločljivostjo, smo analizirali najpogostejše napake na izolativni plasti in ugotovili, da gre za manjkajoče N atome. Z vrstično tunelsko sprektroskopijo smo na čisti površini Cu(111) opazili značilna površinska energijska stanja, na izolativni monoplasti pa izmerili približno 3,2 eV veliko neprevodno vrzel v elektronski sturkturi. S pomočjo naparjevalnika smo na vzorec Cu(111) delno prekrit s CuN pri temperaturi pod 10 K nanesli posamezne atome Mn. Zaradi delne pokritosti površine z izolativno plastjo CuN smo lahko tako na čisto bakreno površino kot na izolativno plast nanesli enako koncentracijo manganovih atomov. Kljub enaki koncentraciji nanešenih manganovih atomov na obeh površinah, smo pri slikanju z VTM opazili, da jih je na Cu(111) manj, več pa jih je na stiku med Cu(111) in CuN. Iz tega smo sklepali, da so na Cu(111) bolj mobilni (in da tudi pri nizkih temperaturah difundirajo na mejo Cu in CuN). Na CuN pa smo opazili dve različni navidezni višini Mn adatomov, ki sta posledica vezave na različni vezavni mesti na površini. Šibkeje so bili vezani atomi z večjo navidezno višino, na atomu bakra, ki so se med slikanjem občasno premaknili na drugo vezavno mesto, na atom dušika, kar smo opazili kot spremembo navidezne višine. Zanimalo nas je število Mn atomov na CuN plasti v odvisnosti od orientacije plasti, saj bi konica lahko atome Mn lažje potiskala po CuN površini z orientacijo vzporedno s smerjo slikanja. Analiza je pokazala premajhne razlike med pokritostmi delov CuN z različno orientacijo glede na smer slikanja, da bi lahko na podlagi teh rezultatov sklepali, da so Mn atomi bolj mobilni vzdolž površine, če je ta orientirana vzporedno s smerjo slikanja.

Language:Slovenian
Keywords:vrstična tunelska mikroskopija, vrstična tunelska spektroskopija, Cu(111), izolativna monoplast, CuN, Mn
Work type:Final paper
Typology:2.11 - Undergraduate Thesis
Organization:FMF - Faculty of Mathematics and Physics
Year:2021
PID:20.500.12556/RUL-130519 This link opens in a new window
COBISS.SI-ID:77369859 This link opens in a new window
Publication date in RUL:16.09.2021
Views:958
Downloads:48
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Secondary language

Language:English
Title:Comparing the Binding of Magnetic Adatoms on Conductive and Insulating Surface
Abstract:
We present the study of the binding of manganese adatoms on the copper Cu(111) surface partially covered with an insulating CuN monolayer using ultra high vacuum low temperature Scanning Tunneling Microscopy (STM) and Spectroscopy (STS). After introduction of the experimental technique, the preparation of the clean Cu(111) surface by standard sputtering and annealing cycles is presented, as well as the subsequent growth of the CuN monolayer by nitrogen implantation followed by annealing. Scanning the partially covered surface revealed three different CuN monolayer orientation and allowed us to resolve individual nitrogen atoms that form the insulating layer. Analyzing images taken at different bias voltages allowed us to identify the most common defects as missing nitrogen atoms. Scanning tunneling spectroscopy measurements revealed the characteristic surface states on Cu(111) and a \mbox{3,2 eV} wide insulating gap on the CuN monolayer. Evaporating Mn on the Cu(111) surface partially covered by CuN at temperatures below 10 K allowed us to observe individual atoms on both surfaces and compare their coverage at the exactly same evaporation parameters. The STM images revealed there were less Mn atoms on the clean Cu(111) surface, indicating their weak binding. This is confirmed by observing several Mn atoms at the boundaries between the clean Cu(111) surface and the CuN monolayer. The two different apparent heights of Mn adatoms observed on the CuN layer indicate two different possible binding positions. Repeated scanning of the same area revealed atoms could move from the weaker bound position with large apparent height, which is on Cu atoms, to the more stable, lower apparent height binding sites, which is on N atoms. Analyzing the coverage as a function of CuN layer orientation with respect to the scanning direction showed too little difference to allow us to conclude that the Mn atoms are more likely to be moved when scanning parallel to the CuN layer.

Keywords:scanning tunneling microscopy, scanning tunneling spectroscopy, Cu(111), insulating monolayer, CuN, Mn

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