ELEKTRIČNO POLJE IN POMNOŽEVANJE NABOJA V SEVALNO POŠKODOVANIH SILICIJEVIH DETEKTORJIH
1000 min). The time evolution of the charge decrease was
found to be fully reproducible under any bias or temperature, influencing long term
annealing induced charge multiplication only. Applying sufficient bias voltage
however (≥ 800 V), results in obtaining a more stable and high enough SNR, providing
optimum detector performance. Both charge collection efficiency and the leakage
current were found to fully recover in late annealing stages after keeping the
detectors at room temperature and no bias for more than 24h.]]>
2016
2016-07-01 09:36:08
1060
Polprevodniški detektorji , Si mikro strip in pad detektorji , radiacijske poškodbe , sevanja hard detektorja , prevoz in razmnoževanje v trdnih medijih , detektor za modeliranje in simulacije
Solid state detectors, Si micro strip and pad detectors, radiation damage, radiation hard detectors, charge transport and multiplication in solid media, detector modelling and simulations
mb31
MARKO
MILOVANOVIĆ
70
Marko
Zavrtanik
991
VisID
16
36102
COBISS_ID
3
11400788
Milovanović Marko - ELEKTRIČNO POLJE IN POMNOŽEVANJE NABOJA V SEVALNO POŠKODOVANIH SILICIJEVIH D.pdf
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Predstavitvena datoteka
2016-07-01 09:36:12