20.500.12556/RUL-178197 Rast 1T-TaS$_2$ kristalov z molekularno žarkovno epitaksijo 1T-TaS$_2$ crystal growth by molecular beam epitaxy V zaključni nalogi predstavljam rast 1T-TaS$_2$ kristalov, z metodo molekularne žarkovne epitaksije. Rast poteka v ultra visokem vakuumu, kar rezultira v visoki čistosti vzorcev. 1T-TaS$_2$ je kvazi dvodimenzionalni material znan po kompleksnih faznih prehodih, povezanih z valom gostote naboja, pojavom Mottovega izolatorja in metastabilnim skritim stanjem. V nalogi predstavim elektronske lastnosti materiala, opišem napravo za molekularno žarkovno epitaksijo, razložim eksperimentalni postopek priprave in rasti kristalov ter predstavim rezultate. Eksperimentalni rezultati vsebujejo analizo vzorcev, posnetih z mikroskopom na atomsko silo, za rast kristalov na tri različne substrate: SrTiO$_3$, SiC in LSAT. Uspešna rast se je pokazala na substratu iz LSAT, kjer so zrasli nanosi debeline 50 nm, medtem ko na substratu iz SiC in SrTiO$_3$ rast ni bila potrjena, zaradi nepopolno nastavljenih rastnih parametrov. This work presents the growth of 1T-TaS$_2$ crystals using molecular beam epitaxy. The growth takes place under ultra-high vacuum conditions, resulting in high purity samples. 1T-TaS$_2$ is a quasi-two-dimensional material known for its complex phase transitions related to charge density waves, Mott insulator phenomena, and metastable hidden states. The thesis covers the electronic properties of the material, describes a molecular beam epitaxy system, explains the experimental procedure for preparation and growth, and presents the results. The experimental results include sample analyses captured with an atomic force microscope for crystal growth on three different substrates: SrTiO$_3$, SiC and LSAT. Successful growth was observed on the LSAT substrate, where 50 nm layers of crystals were formed, while growth was not confirmed on SiC and SrTiO$_3$ substrates due to not perfect growing parameters. 1T-TaS$_2$ tantalov disulfid rast kristalov molekularna žarkovna epitaksija ultra visok vakuum val gostote naboja tanke plasti 1T-TaS$_2$ tantalum disulfide crystal growth molecular beam epitaxy ultra-high vacuum charge density wave thin films true false false Slovenski jezik Angleški jezik Zaključna naloga 2026-01-21 10:38:09 2026-01-21 10:38:14 2026-01-22 04:36:25 0000-00-00 00:00:00 2025 0 0 0000-00-00 NiDoloceno NiDoloceno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 159175 258951939 21032.pdf 21032.pdf 1 D68A45D639CD338BDD55A84836803096 bdd956a0e4862440ff1e2ce00436e95ec4138d84b4fb18a50ebed0c2a96269e4 d92a6582-f6ac-11f0-bf92-0050569b8976 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=225795 Fakulteta za matematiko in fiziko 0 0 0