20.500.12556/RUL-173507 Multimodal characterization of pristine and device-Integrated 2D materials under continuous and pulsed X-rays Multimodalna karakterizacija čistih in v naprave vgrajenih 2D materialov pod delovanjem kontinuirnega in pulznega rentgenskega sevanja 2D Materials (2DMs) such as Graphene (Gr) and Hexagonal Boron Nitride (HBN) exhibit unique electronic and structural properties making them highly attractive for applications in nanoelectronics and radiation-tolerant devices. Understanding their response to ionizing radiation is crucial for their integration in future high-radiation environments. Primarily, this master’s thesis was conducted within the ID10 research group at the European Synchrotron Radiation Facility (ESRF) and focuses on the effects of continuous X-ray (XR) irradiation on 2DM layers. Grazing Incidence Diffraction (GID) and X-Ray Reflectivity (XRR) measurements were performed to characterize the structural response of few-layer Gr and HBN deposited on Silicon (Si) and Silicon Oxide (SiO2) substrates. Additionally, within the ID09 research group pulsed XR irradiation experiments were conducted on Graphene Field Effect Transistors (GFETs), followed by electrical characterization to assess changes in device performance parameters such as charge neutrality point, hysteresis, and current response. The results of GID, XRR and electrical characterization reveal measurable effect of structural modifications induced by irradiation, as well as shifts in the electrical characteristics of GFETs, depending on irradiation conditions. These findings contribute to a better understanding of radiation-induced effects in 2D systems and inform the design of more robust devices for future applications in sensing, electronics, and radiation environments. 2D materiali (2DM), kot sta grafen (Gr) in heksagonalni borov nitrid (HBN), imajo lastnosti, zaradi katerih so zanimivi za uporabo v nanoelektroniki in v za sevanje tolerantnih naprav. Razumevanje njihovega odziva na ionizirajoče sevanje je tako ključno za njihovo prihodnjo vključitev v visoko sevalna okolja. V magistrskem delu se osredotočamo na učinke neprekinjenega obsevanja z rentgenskim sevanjem (XR) na plasti 2DM. Izvedene so bile meritve difrakcije pri plitkem vpadnem kotu (GID) in odbojnosti rentgenskega sevanja (XRR). Cilj je bila karakterizacija strukturnega odziva večplastnega Gr in HBN, nanesenega na silicij (Si) in silicijev dioksid (SiO2). Dodatno je bilo izvedeno tudi pulzno rentgensko obsevanje tranzistorjev (GFET, angl. Graphene Field Effect Transistors), čemur je sledila podrobna električna karakterizacija z namenom ocene sprememb v delovanju naprav, kot so točka nevtralnosti naboja, histereza in tokovni odziv. Rezultati GID, XRR in električne karakterizacije kažejo na vpliv sevanja na strukturo 2D materialov, ter na vpliv na električne lastnosti GFET jev. Rezultati magistrskega dela prispevajo k razumevanju vpliva sevanja na 2D materiale in pripomorejo k načrtovanju robustnejših naprav za uporabo v senzoriki, elektroniki in v sevalnih okoljih. graphene HBN GFET XR irradiation XRR GID electrical characterization 2DMs grafen HBN GFET rentgensko sevanje XRR GID električna karakterizacija 2D materiali true false false Angleški jezik Slovenski jezik Magistrsko delo/naloga 2025-09-18 08:15:08 2025-09-18 08:15:12 2025-11-10 03:34:30 0000-00-00 00:00:00 2025 0 0 0000-00-00 NiDoloceno NiDoloceno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 153902 250637315 19426.pdf 19426.pdf 1 FDBB04660E797889690F353C8D5021B4 3d78068eb124a11a17f1bf783099952b1d58c0f44fd892cf8b08df8564022f36 aa2daea9-9456-11f0-9328-0050569b8976 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=218022 Fakulteta za matematiko in fiziko 0 0 0