20.500.12556/RUL-153066 Gain recovery in heavily Irradiated Low Gain Avalanche Detectors by high temperature annealing Studies of annealing at temperatures up to 450 °C with Low Gain Avalanche Detectors (LGAD) irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 min of annealing at 250 °C. Isochronal annealing for 30 min in 50 °C steps between 300 °C and 450 °C showed that the largest beneficial effect of annealing is at around 350 °C. Another set of devices was annealed for 60 min at 350 °C and this annealing significantly increased depletion voltage of the gain layer (V$_{gl}$). The effect is equivalent to reducing the effective acceptor removal constant by a factor of ∼ 4. Increase of V$_{gl}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial boron atoms. particle tracking detectors radiation-hard detectors solid state detectors LGAD annealing true false true Angleški jezik Ni določen Članek v reviji 2023-12-15 14:57:00 2023-12-15 14:57:02 2023-12-16 03:49:06 0000-00-00 00:00:00 2023 0 0 6 str. art. 168553 Vol. 1055 2023 0000-00-00 Zaloznikova Objavljeno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 5391. 0168-9002 10.1016/j.nima.2023.168553 161709315 1-s2.0-S0168900223005430-main.pdf 1-s2.0-S0168900223005430-main.pdf 1 040415E28465DCDBE2FDA07CF5A042A0 e51a59c9a780354f656eeb9c14b97dd732c1f55178ea84319c41ee9d17325dcf 1676c6b4-9b52-11ee-bebf-0050569b8976 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=178869 https://www.sciencedirect.com/science/article/pii/S0168900223005430 0 f5903556-9b51-11ee-bebf-0050569b8976 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=178868 Fakulteta za matematiko in fiziko 0 0 0