20.500.12556/RUL-131089 Curvature-controlled topological defects Effectively, two-dimensional (2D) closed films exhibiting in-plane orientational ordering (ordered shells) might be instrumental for the realization of scaled crystals. In them, ordered shells are expected to play the role of atoms. Furthermore, topological defects (TDs) within them would determine their valence. Namely, bonding among shells within an isotropic liquid matrix could be established via appropriate nano-binders (i.e., linkers) which tend to be attached to the cores of TDs exploiting the defect core replacement mechanism. Consequently, by varying configurations of TDs one could nucleate growth of scaled crystals displaying different symmetries. For this purpose, it is of interest to develop a simple and robust mechanism via which one could control the position and number of TDs in such atoms. In this paper, we use a minimal mesoscopic model, where variational parameters are the 2D curvature tensor and the 2D orientational tensor order parameter. We demonstrate numerically the efficiency of the effective topological defect cancellation mechanism to predict positional assembling of TDs in ordered films characterized by spatially nonhomogeneous Gaussian curvature. Furthermore, we show how one could efficiently switch among qualitatively different structures by using a relative volume v of ordered shells, which represents a relatively simple naturally accessible control parameter. topological defects Gaussian curvature self-assembling crystal growth nucleation topološki defekti Gaussova ukrivljenost samourejanje tvorba in rast kristalov true false true Angleški jezik Slovenski jezik Članek v reviji 2021-09-22 13:53:23 2021-09-22 13:53:23 2022-09-10 04:09:52 0000-00-00 00:00:00 2017 0 0 11 str. iss. 6, art. 153 Vol. 7 2017 0000-00-00 Zaloznikova Objavljeno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 548/549 2073-4352 10.3390/cryst7060153 11753556 RAZ_Mesarec_Luka_2017.pdf RAZ_Mesarec_Luka_2017.pdf 1 52326AB1898D2D25D9D44425116D0E93 bfb83ba1a3edc8c299923dd79fd27a004e7a2a5b4a91d6d5b4600a0e41d184e4 66e3639f-1b9c-11ec-a523-00155dcfd717 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=148339 http://www.mdpi.com/2073-4352/7/6/153 1 6bbcffa0-1b9b-11ec-a523-00155dcfd717 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=148337 Fakulteta za elektrotehniko 0 0 0