20.500.12556/RUL-122110 Okrevanje silicijevih fotopomnoževalk po obsevanju z nevtroni Silicon photomultipliers recovery after neutron irradiation Silicijeve fotopomnoževalke so polprevodniški detektorji svetlobe, sposobni zaznavati posamezne fotone. Sestavljene so iz mreže plazovnih fotodiod. So veliko manjše od običajnih fotopomnoževalk, neobčutljive na magnetno polje, imajo nižjo ceno izdelave ter delujejo pri manjših napetostih. Silicijeve fotopomnoževalke si želimo uporabljati tudi v sevalnih okoljih, kot so eksperimenti v fiziki visokih energij. Na področju vpliva sevalnih poškodb na detekcijo posameznih fotonov s silicijevimi fotopomnoževalkami še ni bilo narejenih veliko študij. V tej magistrski nalogi sem raziskoval vpliv obsevanja silicijevih fotopomnoževalk z nevtroni ter vpliv segrevanja silicijevih fotopomnoževalk na odpravo sevalnih poškodb. Raziskoval sem vpliv obsevanja na napetost praga ter na sposobnost zaznave posameznega fotona. Po obsevanju smo vsako celico segrevali pet zaporednih tednov pri temperaturi 100 °C ter po vsakem tednu spremljali njihovo okrevanje. Silicon photomultipliers are semiconductor light detectors, capable of detecting single photons. They are made of a matrix of single-photon avalanche diodes connected in parallel. They are a lot smaller than normal photomultiplier tubes, insensitive to magnetic field, have lower production prices and can be operated at lower voltages. There is a tendency for silicon photomultipliers to be used in radiation environments such as high energy physics experiments. In the field of the influence of radiation damage on the detection of individual photons with silicon photomultipliers, not many studies have been done yet. In this masters thesis, I investigated the influence of irradiation of silicon photomultipliers with neutrons and the influence of heating silicon photomultipliers on the elimination of radiation damage. I investigated the effect of radiation on the breakdown voltage and on the bility to detect an individual photon. After irradiation, each cell was heated at 100 °C for five consecutive weeks and monitored the recovery of silicon photomultipliers after each week. silicijeve fotopomnoževalke sevalne poškodbe nevtroni okrevanje silicon photomultipliers radiation damage neutrons thermal annealing true false false Slovenski jezik Angleški jezik Magistrsko delo/naloga 2020-11-22 08:15:08 2020-11-22 08:15:15 2023-09-13 11:33:48 0000-00-00 00:00:00 2020 0 0 0000-00-00 NiDoloceno NiDoloceno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 116329 49257987 2551.pdf 2551.pdf 1 DB27D4EFDDB0C3D468F5776022BE02BF a1d9bf88007eeeda73c9966477701c4fad94a62f846d71d67323461b8e4ba201 0eef1d74-a1bb-11eb-a523-00155dcfd717 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=137274 Fakulteta za matematiko in fiziko 0 0 0