20.500.12556/RUL-107086 Assessment of bulk and interface quality for liquid phase crystallized silicon on glass This paper reports on the electrical quality of liquid phase crystallized silicon (LPC-Si) on glass for thin-film solar cell applications. Spatially resolved methods such as light beam induced current (LBIC), microwave photoconductance decay (MWPCD) mapping, and electron backscatter diffraction were used to access the overall material quality, intra-grain quality, surface passivation, and grain boundary (GB) properties. LBIC line scans across GBs were fitted with a model to characterize the recombination behavior of GBs. According to MWPCD measurement, intra-grain bulk carrier lifetimes were estimated to be larger than 4.5 µs for n-type LPC-Si with a doping concentration in the order of 10$^{16}$ cm$^{−3}$. Low-angle GBs were found to be strongly recombination active and identified as highly defect-rich regions which spatially extend over a range of 40–60 µm and show a diffusion length of 0.4 µm. Based on absorber quality characterization, the influence of intra-grain quality, heterojunction interface, and GBs/dislocations on the cell performance were separately clarified based on two-dimensional (2-D)-device simulation and a diode model. High back surface recombination velocities of several 10$^5$ cm/s are needed to get the best match between simulated and measured open circuit voltage (V$_{o c}$), indicating back surface passivation problem. The results showed that V$_{o c}$ losses are not only because of poor back surface passivation but also because of crystal defects such as GBs and dislocation. bulk lifetime grain boundaries GBs heterojunction light beam induced current liquid phase crystallized silicon LPC-Si two-dimensional device simulation silicon glass doping passivation current measurement measurement by laser beam photovoltaic cells življenjski časi meje kristalnih zrn heterospoj LBIC kristalizacija iz tekoče faze LPC dvodimenzionalne simulacije true false true Angleški jezik Slovenski jezik Članek v reviji 2019-03-27 10:07:06 2019-03-27 10:07:07 2023-06-10 03:37:00 0000-00-00 00:00:00 2019 0 0 Str. 364-373 no. 2 Vol. 9 Mar. 2019 0000-00-00 PostprintKoncna Objavljeno NiDoloceno 0000-00-00 0000-00-00 0000-00-00 2021-03-01 621.38 2156-3381 10.1109/JPHOTOV.2018.2889183 12336212 8910164 RAZ_Thi_Trinh_Cham_i2019.pdf RAZ_Thi_Trinh_Cham_i2019.pdf 1 0F7581280B38467C714138503CEAE6E8 41fa62deee776da0d037f5e9298ec8d40551bb5d3a5378d768feed7b1120f386 662cf3e3-a1b6-11eb-a523-00155dcfd717 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=117879 https://ieeexplore.ieee.org/document/8610302 1 https://repozitorij.uni-lj.si/Dokument.php?lang=slv&id=117877 Fakulteta za elektrotehniko 0 0 0