Gain recovery in heavily Irradiated Low Gain Avalanche Detectors by high temperature annealingMandić, Igor (Avtor) Cindro, Vladimir (Avtor) Gorišek, Andrej (Avtor) Hiti, Bojan (Avtor) Howard, Alissa (Avtor) Kljun, Žan (Avtor) Kramberger, Gregor (Avtor) Maček, Marjeta (Avtor) Mikuž, Marko (Avtor) Novak, Brigita (Avtor) particle tracking detectorsradiation-hard detectorssolid state detectorsLGADannealingStudies of annealing at temperatures up to 450 °C with Low Gain Avalanche Detectors (LGAD) irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 min of annealing at 250 °C. Isochronal annealing for 30 min in 50 °C steps between 300 °C and 450 °C showed that the largest beneficial effect of annealing is at around 350 °C. Another set of devices was annealed for 60 min at 350 °C and this annealing significantly increased depletion voltage of the gain layer (V$_{gl}$). The effect is equivalent to reducing the effective acceptor removal constant by a factor of ∼ 4. Increase of V$_{gl}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial boron atoms.20232023-12-15 14:57:00Članek v reviji153066UDK: 5391.ISSN pri članku: 0168-9002DOI: 10.1016/j.nima.2023.168553COBISS_ID: 161709315sl