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<metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/"><dc:title>Are perovskite solar cell potential-induced degradation proof?</dc:title><dc:creator>Brecl,	Kristijan	(Avtor)
	</dc:creator><dc:creator>Jošt,	Marko	(Avtor)
	</dc:creator><dc:creator>Bokalič,	Matevž	(Avtor)
	</dc:creator><dc:creator>Ekar,	Jernej	(Avtor)
	</dc:creator><dc:creator>Kovač,	Janez	(Avtor)
	</dc:creator><dc:creator>Topič,	Marko	(Avtor)
	</dc:creator><dc:subject>perovskite solar cells</dc:subject><dc:subject>potential-induced degradation</dc:subject><dc:subject>stability</dc:subject><dc:subject>field operation</dc:subject><dc:description>Potential induced degradation (PID) is a solar cell related degradation mechanism due to high potential
difference in a photovoltaic (PV) module between the solar cells and its grounded frame. This type of
degradation is well known for silicon PV, however, for perovskites it has not been thoroughly researched yet. Here, we investigate the PID of perovskite solar cells for bias voltages of ±500 V, half of the currently used system voltage, and ±1000 V with regular I-V and EL measurements during the test. Our devices show a high PID resistance under applied bias of ±500 V, far exceeding the recommended guidelines for silicon PV. However, for the bias voltage of -1000 V a rapid degradation was observed due to the ingress of sodium ions from the glass substrate as confirmed by the ToF-SIMS measurements of spatial and depth distribution of elements in solar cells. Positively biased devices show no degradation due to high voltage exposure. These results show promising signs that perovskite solar cells are PID proof for current PV system designs.</dc:description><dc:date>2021</dc:date><dc:date>2021-12-22 11:42:29</dc:date><dc:type>Neznano</dc:type><dc:identifier>134034</dc:identifier><dc:identifier>UDK: 621.383.51:53</dc:identifier><dc:identifier>ISSN pri članku: 2367-198X</dc:identifier><dc:identifier>DOI: 10.1002/solr.202100815</dc:identifier><dc:identifier>COBISS_ID: 90437635</dc:identifier><dc:language>sl</dc:language></metadata>
