Investigating working principle of electrolyte-gated transistor as immunosensorMARKOČIČ, MIHA (Avtor) Topič, Marko (Mentor) electrolyte-gated eld eect transistorEGFETbiosensorimmunosensorelectric double layer capacitorThe eld of biosensors, utilizing nanotechnology, bioelectronics and electrochemistry is rapidly developing due to a growing demand for aordable and simple diagnostic devices. These devices are applicable in a variety of elds such as environment and food diagnosis, analytical chemistry, clinical diagnosis, safety and defense. Electrolyte-gated eld-eect transistor (EGFET) based biosensor exploiting its inherent signal amplication is oering a viable solution towards extremely sensitive, selective, simple, reliable and aordable diagnostic device. In the eld of clinical diagnosis, the sensitive monitoring and quantifying of the biomarkers is required for successful early discovery and treatment of disease. Immunosensor is a special type of biosensor, using antibodies as a biorecognition layer on the surface of the device. These devices based on a EGFET structure are designed to detect the binding of antibody-antigen immunocomplex and oer a high sensitivity and selectivity.20182018-10-04 09:41:55Magistrsko delo/naloga104079VisID: 44101sl