ELECTRICAL MODELLING AND OPTIMISATION OF HETEROJUNCTION SILICON SOLAR CELLSBalent, Jošt (Avtor) Krč, Janez (Mentor) Silicon heterojunction solar cellsnumerical modellingelectrical simulationsdefect statestunnellingIn this PhD thesis, we use numerical modelling to study and optimise the structures and performance of silicon heterojunction (SHJ) solar cells. We have established an advanced numerical model of the SHJ cell that includes a description of the defect states in the amorphous layers, takes into account the conducting oxide contact layers as a bulk semiconductor, and correctly describes the transport of free carriers through the heterojunctions taking into account different modes of tunneling transport. The model is stable over a wide temperature range of cell operation (-20 °C to 80 °C). In this thesis, the influence of defect states in highly doped amorphous layers and at the heterojunctions between amorphous and crystalline silicon on the SHJ cell efficiency has been analysed using simulations. Recommendations on the optimisation of the electron affinity of the ITO contact layers were made and the impact on the cell efficiency of varying the electron affinity in the ITO contact layers for different densities of defect states in the highly doped amorphous layers was explained. We have also performed a temperature analysis and provided recommendations for optimising SHJ cells operating at different temperatures in various climatic regions. The results of this thesis contribute to a better understanding of SHJ cell performance and provide guidelines for further development.20222022-09-14 06:45:00Doktorsko delo/naloga140268sl