This work presents the growth of 1T-TaS$_2$ crystals using molecular beam epitaxy. The growth takes place under ultra-high vacuum conditions, resulting in high purity samples. 1T-TaS$_2$ is a quasi-two-dimensional material known for its complex phase transitions related to charge density waves, Mott insulator phenomena, and metastable hidden states. The thesis covers the electronic properties of the material, describes a molecular beam epitaxy system, explains the experimental procedure for preparation and growth, and presents the results. The experimental results include sample analyses captured with an atomic force microscope for crystal growth on three different substrates: SrTiO$_3$, SiC and LSAT. Successful growth was observed on the LSAT substrate, where 50 nm layers of crystals were formed, while growth was not confirmed on SiC and SrTiO$_3$ substrates due to not perfect growing parameters.
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